RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless infrastructure applications.
The RFPA2089 offers high-gain linear operation(17.6dB gain at 2.65GHz)at a comparably low DC power,suiting next-generation radios requiring high efficiency.Its external matching allows for use across various radio platforms.
Features include:-60dBc adjacent channel power ratio(ACPR)at 13dBm WCDMA;0.25W of output power at 1dB gain compression point(P1dB);what is claimed to be excellent linearity-to-DC power ratio;single-supply 5V operation;and electrostatic discharge(ESD)protection up to Class 2(2000V)human body model(HBM).
Applications include driver amplifiers for base-station transceivers;PA stages for commercial wireless infrastructure;IF amplifiers;and 2G,3G and LTE transceiver applications.
Pricing begins at$1.84 each for 750-unit quantities.
