20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs
In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic Components Inc(TAEC)and its parent company Toshiba Corp of Tokyo,Japan have announced the expansion of its gallium arsenide field-effect transistor(GaAs FETs)lineup with the addition of two power amplifiers(PAs)optimized for power-added efficiency,targeted at microwave radios and block up-convertors(BUCs).
The new C-band GaAs FETs for microwave digital radios support point-to-point and point-to-multipoint terrestrial communications,and the BUCs support satellite communications.Operating in the 5.3-5.9GHz and 5.9-6.4GHz ranges,respectively,the TIM5359-16EL and TIM5964-16EL have an output power at 1dB gain compression point(P1dB)of 16W,or 42.5dBm(typical),linear gain at 1dB gain compression point(G1dB)of 11.5dB(typical),and power-added efficiency of 38%.
"High gain and high power-added efficiency features will help designers build energy-efficient microwave radios,"says Homayoun Ghani,business development manager,microwave devices,for TAEC's Discrete business unit."By combining our new 16W product along with the linearity-enhanced broadband C-band 4W microwave monolithic integrated circuit(MMIC),Toshiba's TMD0608-4,a simple two-chip design solution is provided for microwave radio applications,"he adds."The improved gain will help microwave designers reduce the number of parts in their overall system."
Samples of the high-gain GaAs FET family are available now.
