Toshiba has added to its small-signal,medium-power Schottky barrier diodes(SBDs)and MOSFETs that are suitable for wireless power transfer applications.
The range of devices covers single and dual n-and p-channel MOSFETs as well as SBDs.The miniature devices are optimised to meet the low power consumption and compact form factor demands of wireless charging applications for portable,battery-powered devices such as mobile phones,digital cameras and video recorders,tablet computers and notebook PCs.
Among the new devices is a MOSFET ideally suited to load switching in a wireless charging transmitter circuit.The 30V SSM6N55NU claims to be the industry's highest performance dual-channel MOSFET in a UDFN6 package measuring j 2mm x 2mm x 0.75mm with a drain current of 4A and a maximum ON resistance(RDS(ON))down to 46m.
The new single and dual SBDs are rated for reverse voltages of 30V and feature very low forward voltage(VF)ratings down to just 0.45V.Ultra-miniature packaging options range from USC(SOD-323)with dimensions of 2.5mm x 1.25mm x 0.9mm to CST2B options that measure just 1.2mm x 0.8mm x 0.6mm.
Applications for the new MOSFETs and diodes include load switching,low-voltage rectification,bridge circuits and reverse current protection.
