SBD

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

Toyoda Gosei Developed Vertical GaN SBDs Capable

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...

Tags: Vertical Schottky barrier, power supply, diodes Free standing

Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride

Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...

Tags: silicon diodes, GaN substrates

Tokyo-Based Mitsubishi Electric Corp Has Launched Its Large Hybrid SiC Transfer-Mold Dual

Tokyo-based Mitsubishi Electric Corp has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT ...

Tags: hybrid silicon carbide, dual in-line package intelligent power module

Mitsubishi Electric Launched a Transfer-Molded Super-Mini DIPPFC Module

Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...

Tags: Mitsubishi Electric, SiC power modules

Mitsubishi Started Shipping Samples of New 1200V Hybrid Silicon Carbide

Tokyo-based Mitsubishi Electric Corp has started shipping samples of new 1200V hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, ...

Tags: Mitsubishi Electric, SiC power modules, High-Frequency Switching

MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes

Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...

Tags: GaN, MOCVD, Gallium Nitride Diodes

Researchers Has Developed a Gallium Nitride MOSHEMT

A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...

Tags: GaN Transistors, Embedding