Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium nitride on silicon carbide (GaN-on-SiC) technologies with a new S-band 500W RF device.
The 2729GN-500 is targeted at high-power air-traffic control airport surveillance radar (ASR) applications. ASR is used to monitor and control aircraft in the terminal within about 100 miles of an airport.
The 2729GN-500 transistor delivers performance of 500W of peak output power with >11.5dB (minimum) of power gain and 53% drain efficiency over the 2.7-2.9GHz band to provide the maximum power in a single device covering this band. Other key features include: standard pulse burst format (100μs, 10% duty factor); a drain bias (Vdd) of +65V; and low thermal resistance of 0.2°C/W.
Microsemi says that systems benefits achieved with GaN-on-SiC high-electron-mobility transistors (HEMTs) include:
a single-ended design with simplified impedance matching (replacing lower-power devices that require additional levels of combining); the highest peak power and power gain for reduced system power stages and final stage combining; a single stage pair provides 1.0kW of peak output power with margin, four-way combined to provide full system peak output power of 2kW; a high operating voltage of 65V reduces the power supply size and DC current demand; rugged performance improves system yields; and the amplifier size is 50% smaller than devices built with silicon bipolar junction transistor (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) technology.
The 2729GN-500 is offered in a single-ended package and is built with 100% high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability.
Loaner demonstration units are available to qualified customers, and technical datasheets are available.
