M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has added to its GaN in Plastic series with a wideband packaged gallium nitride (GaN) power transistor suitable for high-performance civilian and military radar and communications systems.
The MAGX-000035-01000P is a 10W GaN-on-SiC unmatched power transistor that offers broad RF frequency capability, reliable high-voltage operation, and what is claimed to be the smallest footprint in plastic-packaging technology. The SMT surface-mount technology enables faster time-to-market through the use of high-volume commercial, surface-mount assembly methods, says the firm.
Packaged in miniature 3mm x 6mm DFN and 14-lead DFN package, the MAGX-000035-01000P operates from DC-3.5GHz and leverages thermal management techniques to ensure reliability in true surface-mount applications. The device also operates at 50V drain bias, resulting in what is claimed to be outstanding power density performance, higher efficiency, and smaller impedance-matching circuits due to improved device parasitics. Power-added efficiency (PAE) at 1GHz is 58%. Power gain is 15dB. The high-voltage operation also benefits overall system design, with smaller energy storage capacitors and lower current draw. The device can operate in pulsed and CW modes and maintains a calculated mean-time-to-failure (MTTF) at 200 deg C of about 600 years.
“MACOM’s 10W GaN in Plastic power transistor offers both pulsed and CW modes of operation, making it a highly versatile driver or final power stage for multiple applications,” says product manager Paul Beasly. “Furthermore, the device has been thermally designed to operate with standard surface-mount assembly, which significantly simplifies the design and implementation into higher level systems.”
