Last month Electronics Weekly revealed a flexible OLED,sponsored by the US Army.
The developers,at Arizona State University,have sent us a photo and a specification.
The 480x360xRGB 7.4in(81dpi)active matrix OLED is built on a PEN(polyethylene naphthalate)substrate.
Its thin-film oxide transistors are made from indium gallium zinc oxide(IGZO),forming two-transistor one-capacitor bottom emission pixels with 38%aperture.
Luminance is around 200cd/m2,with colour coordinates at 0.676,0.321(x,y for R),0.284,0.638(G),0.158,0.397(B).
The organisations involved include:Universal Display Corporation,Arizona State University,Henkel,DuPont Teijin Films,Sunic System,and the US Army research laboratory.
Source:
http://www.electronicsweekly.com/Articles/2012/06/07/53849/flexible-oled-details-revealed.htm
