SEMI's HB-LED Standards Committee has approved its first standard,specifying sapphire wafers used in making HB-LED devices.
Five categories of single-crystal,single-side polished c-axis sapphire wafers are covered by the new HB1 standard:
•Flatted 100mm diameter,650μm thick,
•Flatted 150mm diameter,1,000μm thick,
•Flatted 150mm diameter,1,300μm thick,
•Notched 150mm diameter,1,000μm thick,and
•Notched 150mm diameter,1,300μm thick
SEMI's HB-LED Standards Committee was formed in late 2010,comprised of companies involved in HB-LED devices,sapphire wafers,MOCVD wafer processing,and equipment and materials suppliers.
SEMI also plans to begin experiments and test methods based on a survey deployed last summer about defect vs.inspection techniques,aiming to identify sapphire wafer defects and inspection techniques catering to HB-LED manufacturing.
The wafer,automation,and impurities/defects task forces will be meeting at the Strategies in Light conference Feb.12-14 in Santa Clara,CA.The NA HB-LEB committee and task forces will meet at the NA Standards Spring 2013 meetings April 1-4 in San Jose.
