At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - 600V JEDEC-qualified GaN-on-silicon high-electron-mobility transistors (HEMTs). Now, at APEC 2014 in Fort Worth, TX, USA (16-20 March), Transphorm will give two presentations on 20 March, providing an update on growing industry acceptance of gallium nitride (GaN), along with the advantages of using the technology for power conversion designs in actual implementations.
To offer an update on energy-efficient and compact power conversion technology, one presentation addresses long-term reliability of GaN devices, while the other deals with the impact of high-frequency switching on magnetic devices:
‘Moving Beyond Qualification to Verify the Long-Term Reliability of GaN Devices’, authored by Dr Kurt Smith and Dr YiFeng Wu, in the Industry Session IS2-4-2 on ‘Wide Band Gap Devices’ (8:30-11:30am); ‘A GaN Speaker, What He Needs’, by YiFeng Wu, in the Industry Session IS2-5-3 on ‘How are Magnetics Catching up to SiC & GaN’ (2-5:30pm).
APEC’s Industry Session presentations are solicited from leaders in the power electronics industry and are geared to address topics of current interest - particularly the impact of emerging technologies on today’s designs. Unlike APEC’s General Session papers, presentations in Industry Sessions are not published in the conference proceedings and will only be available to session attendees.
