ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by introducing its newest family of 650V Schottkys. The diodes’ SiC technology is said to provide higher switching capabilities with lower power losses and easy paralleling of devices.
The new family of 650V SiC diodes includes surface-mount and through-hole packages ranging from 6A to 50A. All of the diodes provide zero reverse recovery, low forward voltage, temperature-independent current stability, high surge capacity, and positive temperature coefficient.
The new diodes are targeted at engineers designing power factor correction (PFC) and boost converters for applications including solar photovoltaic (PV) inverters, electric vehicle/hybrid electric vehicle (EV/HEV) chargers, telecom power and data-center power supplies while facing challenges to deliver smaller footprints at higher efficiencies.
The 650V devices offer the combined system benefits of higher efficiency, higher power density, smaller footprints and enhanced reliability. They exhibit a reduced power loss due to the inherent low forward voltage (VF) and no reverse recovery charge of SiC diodes, and hence improved efficiency. The faster recovery of SiC diodes allows for higher switching speeds and therefore reduces the size of magnetics and other passive components, enabling greater power density and smaller overall circuit designs. In addition, they can withstand higher surge currents and deliver stability over their -55°C to +175°C operating temperature range.
ON Semiconductor’s SiC Schottky diodes feature a patented termination structure that is said to reinforce reliability and enhance stability and ruggedness. Additionally, they offer what is claimed to be higher avalanche energy, the industry’s highest unclamped inductive switching (UIS) capability and lowest leakage currents.
“ON Semiconductor’s new 650V family of SiC diodes complement the company’s existing 1200V SiC devices, bringing a broader product range to our customers,” says Simon Keeton, senior VP & general manager of ON Semiconductor’s MOSFET business unit. “Utilizing the unique characteristics of wide-bandgap materials, SiC technology offers tangible benefits over silicon, and their robust construction provides a dependable solution in applications in challenging environments,” he adds. “Our customers will benefit from simplified, better-performing, smaller-footprint designs as a result of these new devices.”
The 650V SiC diode devices are offered in DPAK, TO-220 and TO-247 packages, priced at $1.30-14.39 per unit in 1000 unit quantities.
In booth #601 at the Applied Power Electronics Conference (APEC 2018) in San Antonio, Texas (4-8 March), ON Semiconductor is giving a live demonstration of its SiC MOSFETs and diodes, showing how the firm’s latest simulation modelling techniques can accurately match real-life device operation.
