Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V monolithic GaN transistor half-bridge which, by integrating two eGaN power FETs into a single device, eliminates interconnect inductances and the interstitial space needed on the PCB. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end-user’s power conversion system.
The EPC2111 is suitable for high-frequency 12V to point-of-load DC-DC conversion. For example, the EPC2111 increases efficiency for complete overall point-of-load system applications to more than 85% at 14A when switching at 5MHz and to more than 80% when switching at 10MHz and converting from 12V to 1.8V.
Each device within the half-bridge component has a voltage rating of 30V. The upper FET has a typical RDS(on) of 14mΩ, and the lower FET has a typical RDS(on) of 6mΩ. The EPC2111 comes in a chipscale package for improved switching speed and thermal performance, and is only 3.5mm x 1.5mm for increased power density.
A primary application for the device is for notebook and tablet computing. The power conversion circuitry in these systems occupies nearly half the space and defines the height of the motherboard. The high-frequency capability of GaN reduces the size required for power conversion and can therefore drive significant size reductions in next-generation mobile computing, says EPC.
Priced at $1.62 each in 1000-unit quantities, the EPC2111 monolithic half-bridge is available for immediate delivery from Digi-Key.
