Nanoelectronics research center Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
“The productivity, repeatability, uniformity and crystal quality of Veeco’s MOCVD equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications,” said Barun Dutta, Imec’s Chief Scientist. “The device performance enabled by the epi has helped us realize state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology.”
Imec’s multi-partner GaN-on-Si research and development program gathers the industry to jointly develop world-class GaN LED and power devices on 200 mm silicon substrates compatible with a 200 mm CMOS-compatible infrastructure. By joining forces at Imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster.
“We have been working with Imec on this program since 2011 and are encouraged by our progress,” said Jim Jenson, SVP and General Manager of Veeco MOCVD. “Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices. This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles.”
Veeco’s MOCVD equipment features excellent film quality and low defects, which are key for effective GaN-on-Si processing. It also incorporates Veeco's Uniform FlowFlange® technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc® technology enables system availability, particle performance and high throughput.
