GaN on Si Devices articles & resources on Made-in-China.com

GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025

Mar 13, 2016

Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...

Tags: Semiconductor Market, GaN, SiC

X-FAB and Exagan Have Entered Into a Joint Development Agreement

May 21, 2015

X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...

Tags: Power Switching Devices, GaN-on-silicon technology

MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes

May 7, 2014

Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...

Tags: GaN, MOCVD, Gallium Nitride Diodes

NECO Is on a Project Aimed at Lowering The Cost of Producing Gallium Nitride

Sep 5, 2013

Nanoelectronics research centre imec of Belgium and Veeco Instruments Inc. (Nasdaq:VECO) are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. Barun ...

Tags: GaN-on-Si Devices, Power Electronics

Veeco Parters with Imec to Develop Gan-on-Si Devices for Improve It's Efficiency

Sep 5, 2013

Nanoelectronics research center Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. “The ...

Tags: GaN-on-Si Devices, LED Applications

Veeco Has Been Instrumental in Helping Us Meet Our Development Milestones

Sep 4, 2013

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA and Belgium's imec are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si)-based power ...

Tags: LED, Power Electronics, Electrical, Electronics

Aixtron SE Has Been Awarded The 2013 Ledinside Aurora Award

Jun 14, 2013

Deposition equipment maker Aixtron SE of Herzogenrath, Germany has been awarded the 2013 LEDinside Aurora Award in the category “Most efficient MOCVD Equipment”. Aixtron received the award for its AIX G5+ MOCVD system for growth ...

Tags: Aixtron, MOCVD System

Nitronex Has Fully Qualified Its NPT1015 Transistor

May 31, 2013

Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...

Tags: RF Power Transistor, Nitronex

International Rectifier Has Qualified and Shipped Product

May 13, 2013

Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...

Tags: International Rectifier, GaN-on-silicon

GaN and SiC Power Semiconductors Is Forecast to Grow a Factor of 18

Apr 27, 2013

The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...

Tags: GaN Power, SiC Power, Lighting

SiC and GaN are Forecast to Grow a Remarkable Factor of 18 Over 10 Years

Apr 26, 2013

Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...

Tags: GaN power, semiconductor, SiC Power Semiconductor

IEMN Developed a GaN on Silicon High-Electron-Mobility Transistor

Apr 17, 2013

Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...

Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD

Fujitsu Has Achieved High Output Power of 2.5kw in Server Power -Supply Units

Nov 29, 2012

Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...

Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology

Pulsed Measurement to Assess Current-Collapse/Gate-Lag Effects Showed Little Dispersion

Aug 22, 2012

Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...

Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance

GaN on Si Devices

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