Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W gallium nitride (GaN) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) amplifier for satellite earth stations.
Satellite networks (used for high-speed communication during natural disasters and in areas where ground networks are difficult to construct) are currently implemented mainly in the C-band (4–8GHz) and Ku-band (12–18GHz), but higher frequencies are increasingly being used. Also, market demand for deployments in the higher-frequency Ka-band are increasing.
The new Ka-band GaN-HEMT MMIC is targeted at helping to meet the growing demand for higher-frequency deployments, as well as facilitating the development of satellite communications equipment capable of extra-high output power and efficiency.
With an optimized transistor configuration on one chip that integrates amplifier transistors circuits, matching circuits and distortion-reducing linearizer, the MGFG5H3001 offers what are claimed to be industry-best low distortion and saturated output power rating (Pout typical) of 39.0dBm (8W). The reduced number of parts yields a small footprint that can help to downsize satellite earth-station power transmitters.
Samples of the MGFG5H3001 are shipping from 1 November.
