GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting and presenting a technical paper at the iPower 2013 'Building A Smart Power Future' conference & exhibition, Warwick University, UK (27-28 November).
Organized by IMAPS-UK (the UK chapter of the International Microelectronics And Packaging Society) and NMI (the UK trade association for electronic systems, microelectronics and semiconductors) in conjunction with the Warwick University's Electronics, Power and Microsystems Research Group, iPower 2013 gathers experts from industry, science, supply and academia to focus on developments in power electronic products and technologies.
The second day of the conference is devoted to the packaging industry and the opportunities presented by higher-power, faster semiconductors for power conversion products. Geoff Haynes, VP business development, is presenting a paper 'Breaking the Bonds' that highlights the extreme performance gains in switching speed and potential junction operating temperature that GaN switches can bring to the industry.
He will explore and discuss overcoming the challenges these new devices present and how to harness them to greatest effect, achieving savings through intelligent use of increased power during peak production.
At the exhibition, GaN Systems is showcasing its gallium nitride high-power transistors for clean power conversion applications based on its proprietary Island Technology. The new devices have low on-resistance and negligible charge storage, so switching efficiency performance is superior to existing silicon semiconductors, it is claimed.
