In booth 616 at the SPIE Photonics West 2015 event in San Francisco's Moscone Center (7-12 February), Marktech Optoelectronics of Latham, NY, USA, whose capabilities span wafer growth through finished packaging and custom solutions, is to introduce its new line of photodetectors.
Manufactured in Marktech's recently opened California facility, the new photodetectors include a large assortment of products ranging from 250nm to 2.6um including specialty photodetectors (GaP Schottky), standard photovoltaic silicon photodiodes, silicon photo-transistors, silicon avalanche photodiodes (APDs), InGaAs PIN photodiodes and InP PIN photodiodes.
"For 30 years we have been focused on the emission side of sensors," notes CEO Mark Campito. "Our new California facility allows us to offer our customers a large selection of both standard and custom detectors for complete solutions from one source."
These photodetectors join Marktech's wide range of emitter sensors ranging from deep UV 280nm to 1720nm short-wave infrared and InGaAs/InP epitaxial wafers from 1.0μm to 2.6μm.
