Peregrine Semiconductor Corp of San Diego, CA, USA - a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) - has announced the UltraCMOS 11 platform, the first RF SOI technology built on the 130nm 300mm RF technology platform of GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries). Peregrine says that, by moving to a 300mm wafer, it opens the door to new enhancements and advanced features in future generations of its UltraCMOS technology platform, which can leverage GlobalFoundries' 300mm production-proven design enablement and manufacturing expertise and scale.
Peregrine collaborated with tier-one fab GlobalFoundries to develop the next-generation UltraCMOS 11 platform, which uses a custom fabrication flow from GlobalFoundries' Fab 7 facility in Singapore.
"As an industry first, the new RF SOI technology reaffirms our commitment to the RF market, and is another example how GlobalFoundries' 300mm fab in Singapore can provide new levels of performance, reliability and scalability for integrated RF front-end solutions," says Brian Harrison, GlobalFoundries' senior VP of Integration and Factory Management. "We will continue to leverage our RF process development expertise and manufacturing scale to maximize the technology's capabilities and drive differentiation," he adds.
Building on the UltraCMOS 10 technology platform (also developed and manufactured by GlobalFoundries), the UltraCMOS 11 platform will be the foundation for Peregrine's high-volume mobile products and SOI products for other applications. "By using 300mm wafers, Peregrine ensures our technology roadmap will continue to be on the leading edge of RF SOI," reckons Peregrine's CEO Jim Cable.
