M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched a ceramic gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) power transistor for avionics applications.
The MAGX-001090-600L00 is a gold-metalized, matched RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air-traffic control systems. It provides 600W of output power with a typical 21.4dB of gain and 63% drain efficiency. The device has very low thermal resistance (Rth) of 0.050C/W and what is claimed to be best-in-class load mismatch tolerance of 5:1. In addition, it has the lowest pulse droop of 0.2dB and can be used effectively under more demanding Mode-S ELM operating conditions.
MACOM says that its GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests, and that the device has a predicted mean time to failure (MTTF) of over 600 years at a maximum junction temperature of 2000C. It also has a very high breakdown voltage, providing reliable and stable operation even in extreme load-mismatch conditions.
“MACOM’s GaN power technology offers a significant advantage in higher gain, higher efficiency and improved reliability compared to similar silicon bipolar and LDMOS power transistors,” claims product manager Paul Beasly. “The device also provides the highest load-mismatch tolerance in its class - a critical parameter to ensure the highest reliability and performance in demanding avionics applications.”
Evaluation boards of the MAGX-001090-600L00 are available from stock.
First X-band core chip, GaN in plastic L-band module, and highest-power E-band power amplifiers showcased at EuMW
In booth 169 at European Microwave Week (EuMW 2013) in Nuremberg Germany (8-11 October), MACOM is exhibiting a broad portfolio of new products for aerospace, defense and network applications, including integrated GaN modules for the L- and S- frequency bands, and what is claimed to be the industry’s first X-band core chipset, the highest-power GaN in plastic-packaged power transistors, and the highest-power E-band MMIC power amplifier, as well as the lowest-power electro-absorption modulator laser (EML) driver for 100G optoelectronics applications, linear amplifiers for 13/15/18GHz cellular backhaul, and a broad catalog of 2000+ reliable standard products.
Also, on 7 October (9:50-10.10am) at the 8th European Microwave Integrated Circuits conference (EuMIC), Henrik Morkner (director of engineering at MACOM’s Santa Clara Design Center) is presenting the technical paper ‘A Compact Sub-harmonic Pumped Integrated 18-30GHz Balanced Image Reject Down Converter based on E/D mode PHEMT’, targeted at meeting the need for low-cost integrated solutions with enhancement/depletion-mode pseudomorphic high-electron-mobility transistors.
