At the PCIM (Power Conversion Intelligent Motion) Europe 2014 conference in Nuremberg, Germany (20-22 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, will be presenting three application-focused technical presentations on the enabling capability of eGaN FETs in 10MHz buck converters for envelope tracking; how a novel new topology featuring eGaN FETs increases efficiency in wireless power transfer by 20%; and how an optimized parallel layout of eGaN power transistors achieves efficiencies above 96.5% in a 480W converter:
20 May, Poster Dialogue Session (3.30–5pm): 'Multi Megahertz Buck Converters Using eGaN FETs for Envelope Tracking', presented by Johan Strydom; 21 May (10am): 'Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications', presented by David Reush; and 22 May (10.30am): 'eGaN FET Based Wireless Energy Transfer Topology Performance', presented by Michael de Rooij.
Also, during the conference, co-founder & CEO Alex Lidow will participate in two industry expert panel discussions on the accelerated adoption of wide-bandgap semiconductors such as GaN in a vast array of applications:
21 May (12.20–1.20pm), Podium Discussion: 'Mature Wide Band Gap Semiconductors'; and 21 May (2–4pm), Power Electronics Europe Magazine Session: 'Si vs. SiC/GaN – Competition or Coexistence'.
"Selection [by the technical review committee of PCIM Europe] supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers around the world," comments Lidow.
