M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) HEMT power transistor for L-band pulsed radar applications.
The MAGX-001214-650L00 is a gold-metalized pre-matched GaN-on-SiC transistor that offers what is claimed to be the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-band radar applications. The device guarantees 650W of peak power with a typical gain of 19.5dB and efficiency of 60%. It also has very high breakdown voltages, allowing users reliable and stable operation at 50V under more extreme load mismatch conditions.
The device is assembled in a high-performance ceramic flange package and has undergone MACOM's rigorous qualification and reliability testing. Operating at 1200–1400MHz, the MAGX-001214-650L00 is highly robust, with a mean time to failure (MTTF) of 5.3x106 hours.
"The device is an ideal candidate for customers looking to combine two power transistors and realize over 1000W of peak power in a single pallet for next-generation L-band radar systems that require increased performance in smaller footprints," says product manager Paul Beasly.
Samples of the MAGX-001214-650L00 are available from stock.
