M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications, available in standard flange (MAGX-000912-650L00) or earless flange (MAGX-000912-650L0S) packaging.
Optimized for civilian and military pulsed avionics amplifier applications in the 960-1215MHz frequency range for Mode-S, TCAS, JTIDS, DME and TACAN operation, the MAGX-000912-650L0x is a rugged and robust gold-metalized, internally matched GaN-on-SiC depletion-mode RF power transistor (RoHS-compliant and 260°C reflow compatible), with a mean time to failure (MTTF) of 600 years. Peak output power (Pout) is 650W, with 20dB typical gain and 62% drain efficiency. The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), enabling reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies, it is claimed. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.
"The device is an ideal candidate for customers looking to upgrade L-band avionics systems to the next level of pulsed power performance," reckons senior product director Gary Lopes.
