GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode (E-mode) GaN-on-silicon high-power transistors based on its three core proprietary technologies. The new device is claimed to have the highest current capability on the market at 60A, further expanding the firm's range of power switching semiconductors.
The GS65516T 650V E-mode high-electron-mobility transistor (E-HEMT) power switch features GaN Systems' new proprietary topside cooling configuration (announced in March), which allows it to be cooled using familiar and conventional heat-sink or fan cooling techniques. The device is based on the company's ultra-low figure of merit (FOM) Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging, and measures 9.0mm x 7.6mm x 0.45mm.
Additional features include reverse current capability, integral source sense and zero reverse recovery loss. Dual-gate pads help design engineers to achieve optimal board layout.
The GS65516T suits high-frequency, high-efficiency power conversion applications such as on-board battery chargers, 400V DC-DC conversion, inverters, uninterruptable power supplies (UPS) and VFD motor drives, AC-DC power supplies (PFC and primary) and VHF small form factor power adapters.
The GS65516T is available to customers packaged on tape & reel or mini-reel, through GaN Systems' worldwide distribution partners.
