Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, 250mΩ GA08JT17-247 and 500mΩ GA16JT17-247) and two 1200V devices (the 220mΩ GA06JT12-247 and 460mΩ GA03JT12-247).
GeneSiC says that its junction transistors exhibit ultra-fast switching capability (with typical turn-on/off rise/fall times of less than 50ns), a square reverse-biased safe operation area (RBSOA), and temperature-independent transient energy losses and switching times (with a maximum junction temperature Tjmax of 175°C). The switches are gate-oxide free, normally-off, exhibit a positive temperature coefficient of on-resistance, and - unlike other SiC switches - are capable of being driven by commercial, commonly available 15V insulated-gate bipolar transistor (IGBT) gate drivers. While offering compatibility with SiC JFET drivers, junction transistors can be easily paralleled due to their matching transient characteristics.
Incorporating high-voltage, high-frequency and high-temperature-capable SiC junction transistors can increase conversion efficiency and reduce the size/weight/volume of power electronics, says GeneSiC. The new devices are hence targeted at a variety of applications including server, telecom and networking power supplies, uninterruptable power supplies (UPS), solar inverters, industrial motor control systems, and downhole applications.
“As power system designers continue to push the limits of operating frequency while still demanding high circuit efficiencies, they need SiC switches that can offer a standard of performance and production uniformity,” says president Dr Ranbir Singh. “Utilizing unique device and fabrication innovations, GeneSiC's transistor products help designers achieve all that in a more robust solution,” he claims.
All devices are 100% tested to full voltage/current ratings and housed in halogen-free, RoHS-compliant TO-247 packages.
