VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the availability of its new generation of ALL-Switch (Advanced Low Loss Switch) devices, comprising V22S65A (with an internal SiC diode) and V22N65A (without internal SiC diode).
The new version of VisIC's ALL-Switch is said to significantly reduce the Miller effect, enabling readily available, standard drivers to be used in VisIC-based designs. The new devices also reduce the bill of materials required for specific applications.
Effective in hard-switching topologies, the V22 series can be used for zero voltage switching or zero current switching topologies. It is claimed to have the lowest Rdson among either 650V GaN- or SiC-based MOSFET transistors, and can achieve extremely efficient power conversion with a slew rate exceeding 100V/nS. In addition, since the threshold voltage exceeds 5V, the devices work well in harsh EMI environments, adds the firm.
VisIC has demonstrated what it claims is record with performance of its half-bridge demonstration board, achieving better than 99.3% peak efficiency at 200kHz in a hard-switched topology, providing 2.5kW output.
