GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is showcasing its latest devices in booth 13 at the 16th European Conference on Power Electronics and Applications (EPE '14 – ECCE Europe) in Lappeenranta, Finland (26–28 August).
The exhibition provides the first opportunity in Scandinavia for GaN Systems to present its two newest product lines – a series of five normally-off 100V GaN transistors and a family of low-inductance, thermally efficient 650V transistors.
Based on proprietary Island Technology, the firm says that its devices bring advantages and higher performance to applications ranging from onboard battery charging, high-voltage DC-DC and AC-DC conversion, UPS (uninterruptible power supplies), air-conditioning, appliances, heavy-duty battery-operated power tools and E-bikes.
The five normally-off 100V GaN transistors span 20-80A with very low on-resistance. The family consists of the devices GS61002P, GS61004P, GS61006P and GS61008P (which are respectively 20A/21mΩ, 40A/11mΩ, 60A/8mΩ and 80A/5mΩ parts) and the GS71008P (an 80A/5mΩ half-bridge device).
The second of GaN Systems' latest product lines comprise five normally-off 650V GaN transistors with reverse current capability, zero reverse recovery charge, and source-sense for optimal high-speed design. The GS66502P, GS66504P, GS66506P and GS66508P are respectively 8.5A/165mΩ, 17A/82mΩ, 25A/55mΩ and 34A/41mΩ parts, while the GS43106L is a 30A/60mΩ cascode.
Both the 100V and 650V devices are delivered in GaN Systems' compact, near-chip-scale, embedded GaNPX packages, which minimize inductance and optimize thermal performance.
The firm is also showing its 100A and 200A high-current parts, which were launched earlier this year. "GaN Systems is the first company in the market to have such a wide range of gallium nitride power switching semiconductors available for sampling now," claims president Girvan Paterson.
