In booth 1 (level 0) at the 17th Conference on Power Electronics and Applications (EPE'15 - ECCE Europe) hosted by CERN in Geneva, Swizerland (8–10 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its GS66540C 650V 100A high-current GaN power transistors for the first time.
Part of the firm's family of 650V GaN power transistors based on its proprietary Island Technology, the high-density devices are said to achieve extremely efficient power conversion with fast switching speeds of >100V/nS and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX packaging specially developed for higher operating currents, providing the lower inductance and greater surface-mount mechanical robustness required by power modules for the industrial and automotive markets. The near-chip-scale parts have no wirebonds and offer what is described as step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs.
Parts are now sampling with major customers (including OEMs and tier-1 manufacturers) and are being designed into solar, industrial and automotive applications.
Also at EPE'15, GaN Systems will display multiple customer platforms, including a 2kW commercial vehicle inverter from global transportation technology company Ricardo.
GaN Systems claims to be the first company to have developed and productized a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. Its Island Technology die design, combined with its extremely low inductance and thermally efficient GaNPX packaging and Drive Assist technology, provides a 45-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs.
