Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs).
The EPC2016 is a 3.36mm2, 100VDS, 11A device with a maximum on-resistance RDS(on) of 16milli-Ohms with 5V applied to the gate. The GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely low RDS(on), and low gate charge QG (3.8nC typical, 5.2nC maximum), all in a very small 2.1mm x 1.6mm LGA package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has many times superior switching performance, says EPC. Applications that can benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high-frequency circuits.
"The EPC2016 is an excellent complement to our existing family of eGaN FETs," says co-founder & CEO Alex Lidow. "The lower gate charge and output capacitances significantly reduce the switching losses in power conversion applications."
Also, to support designers in evaluating and incorporating eGaN FETs into their power conversion systems, the EPC9010 development board (featuring the EPC2016 devices and the LM5113 gate driver IC in a half-bridge configuration) is now available.
In 1000-piece quantities, the EPC2016 is priced at $1.61 and is available through Digi-Key Corp.
