Vishay Intertechnology, Inc. VSH today announced its technology lineup for the Applied Power Electronics Conference andExposition (APEC) 2014, taking place March 16-20 in Fort Worth,Texas.
In booth 921, the company will be highlighting its latestindustry-leading power MOSFET, passive component, diode, and power ICtechnologies for a wide range of applications.
Vishay Siliconix power MOSFET technologies on display at APEC 2014will include TrenchFET(R) Gen IV devices with industry-lowon-resistance down to 1.35 milliohms at 4.5 V; PowerPAIR(R)co-packaged MOSFETs that save space over using discrete solutionswhile increasing power densityA figure of merit usually expressed in Joules per cubic inch for capacitorsA figure of merit usually expressed in Joules per cubic inch for capacitorsA figure of merit usually expressed in Joules per cubic inch for capacitors and efficiency; TrenchFET p-channelGen III devices with the lowest on-resistance ever achieved forp-channel MOSFETs; the AEC-Q101-qualified SQ Rugged Series; and 650 VEVolumetric Efficiency Series devices for increased efficiency.
Highlighted power ICs will include products from the Vishay SiliconixmicroBUCK(R) family of integrated synchronous buck regulators.High-efficiency devices with ultra-fast transient response time fornetwork processors, DSPs, FPGAs, ASICs, set-top boxes, and more willbe on display, as well as compact regulators with programmable LDOfor battery-operated mobile computing devices. In addition, Vishaywill be demonstrating the SiC620R 70 A DrMOS power stage forhigh-frequencyThe number of complete cycles or vibrations per unit of time. Rate of alternation in an AC current. Expressed in cycles per second or hertz (Hz). switching over 800 kHz, and the company’s free onlinePowerCAD design simulation tool.
