API Technologies Corp of Orlando, Florida, USA, a provider of RF/microwave, microelectronics, and security solutions, has expanded its power amplifier (PA) range to include the latest in GaN technology driven designs. This expanded line is intended for use in electronic warfare (EW), radio-controlled improvised explosive device (RCIED) countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical. The company’s line of power amplifier products will be on display at the annual IMS Exhibition in Seattle, WA, USA (4-6 June).
“Our strategy, to create strategic partnerships with leading defense companies to provide both standard and custom solutions, has earned us a reputation as a leader in the broadband power amplification market,” said Richard Graham, director, sales & marketing, RF/Microwave & Microelectronics, API Technologies. “API’s successful heritage in amplifier design includes both broadband, high linearity amplifiers, as well as high frequency, narrowband, higher power amplifiers to 100 watts with strict attention to size and value.”
API says that its engineers optimize package configurations to address numerous thermal conditions to meet customers’ system level integration challenges. API provides compact, lightweight, excellent thermal characteristic power amplifiers to customers in 6–8 week lead-times. Engineering high-power GaN power amplifiers to predict junction-to-case temperatures and thermal profiles during the design stage, helps eliminate the need for cumbersome heat-sinks thus reducing cost and providing for more accurate results.
API currently offers Class A, AB, and C power amplifier designs up to 500W from 100kHz to 6000MHz. Recent developments also include higher-power 1kW pulsed applications through X-band.
