M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched two high-power monolithic microwave integrated circuit (MMIC) amplifiers for X-band communication and radar applications.
The MAAP-015030 two-stage 8.5-11.75GHz gallium arsenide (GaAs) MMIC power amplifier has a saturated pulsed output power of 41dBm, large-signal gain of 21dB, small-signal gain of 25dB, and 40% power-added efficiency (PAE). The power amplifier can be biased using a direct gate voltage or using an on-chip gate bias circuit, providing a bare die solution for high-power X-band applications.
The MAAP-015035 is a three-stage 8.5-11.5GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41dBm and small-signal gain of 36dB. The gate terminals can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40% PAE and offers very high gain, eliminating the need for a driver amplifier in customers' circuits.
Both power amplifier operate from a bias voltage of 8V. "The versatile biasing options and wide-band operation make the devices ideal for a wide range of X-band applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links," says product manager Paul Beasly.
Samples of both the MAAP-015030 and MAAP-015035 are available from stock.
