Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina.
In booth 501, the company will be highlighting its latest industry-leading power MOSFET, passive component, and diode technologies for a wide range of applications.
Vishay Siliconix power MOSFETs on display at APEC 2015 will include the 40 V TrenchFET® SQJQ402E, the industry’s first AEC-Q101-qualified MOSFET to feature the 8 mm by 8 mm by 1.8 mm PowerPAK® 8x8L package, and the first in an 8 mm by 8 mm package with J leads. To save PCB space in automotive applications, the device offers similar on-resistance and higher continuous current than MOSFETs in the D²PAK while reducing the footprint area and profile by 60 %. To save power, the SQJQ402E offers half the on-resistance, twice the current, and a 21 % smaller profile than devices in the DPAK, all with only a 12 % larger footprint.
Demonstrations from Vishay Siliconix will include a multi-stage power supply architecture illustrating how a broad selection of new MOSFET technologies — from the 600 V E Series to 30 V TrenchFET Gen IV devices — can provide total power conversion solutions from “plug to processor.”
Highlighted diodes from Vishay Semiconductors will include standard rectifiers with ESD capability in the low-profile SMPD (TO-263AC) package for automotive applications, as well as insulated gate bipolar transistor (IGBT) power modules featuring Ultrafast Trench IGBTs and high-efficiency HEXFRED® and FRED Pt® diodes in EMIPAK packages for solar inverters and UPS. In addition, Vishay will be providing demonstrations of its new 600 V and 650 V Trench IGBT platform featuring Punch Through (PT) and Field Stop (FS) technologies. Designed to increase efficiency in motor drives, UPS, solar inverters, and welding machine inverters, the bare die devices offer low collector-to-emitter voltages and fast and soft turn-on and turn-off for low conduction and switching losses.
