Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs).
The EPC2018 is a 5.76mm2, 150VDS, 12A device with a maximum RDS(on) of 25milliOhms with 5V applied to the gate. The GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely low RDS(on), low gate charge QG (5nC typical, 7.5nC maximum), all in a very small 3.6mm x 1.6mm LGA package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance, says EPC. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and other circuits needing nanosecond switching speeds.
"The low on-resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications," says co-founder & CEO Alex Lidow.
In 1000-piece quantities, the EPC2018 is priced at $6.54 and is available through distributor Digi-Key Corp.
