Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the University of Oklahoma will receive the first shipment of Veeco’s new GENxplor R&D molecular beam epitaxy (MBE) system early in fourth-quarter 2013.
The GENxplor is a fully integrated deposition system that creates high-quality epitaxial layers on substrates up to 3” in diameter and is suitable for research on a wide variety of materials including gallium arsenide, nitrides, and oxides.
The University of Oklahoma is the first university in the world that will have the new GENxplor, says Dr.Michael Santos, professor in Engineering Physics. “The proven growth chamber and enhanced features of the GENxplor, including robust process flexibility and convenient access to effusion cells, are ideal for the materials research we are conducting for technologies such as lasers, photodetectors, and solar cells,” he comments. “We have two other Veeco MBE systems in our lab that have performed very well.”
In addition to receiving the first tool, Santos is scheduled to discuss his latest MBE research at the 30th North America Molecular Beam Epitaxy Conference (NAMBE 2013) in Banff, Canada (5-11 October).
“The University of Oklahoma is at the forefront of compound semiconductor materials research, so it is quite fitting that they are receiving the first GENxplor,” comments Jim Northup, VP, general manager of Veeco’s MBE Operations. “It has been designed specifically for the R&D community, combining an easy-to-use platform with our world-class MBE performance.”
The GENxplor’s efficient single-frame design combines all vacuum hardware with on-board electronics to make it up to 40% smaller than other MBE systems, it is reckoned, saving valuable lab space. Because the manual system is integrated on a single frame, installation time is reduced, Veeco adds. The open-architecture design also improves ease-of-use, provides convenient access to effusion cells, and allows easier serviceability compared to other MBE systems, says the firm.
