Opto Diode Has Launched The OD-669-850 High-Power Gallium Aluminum Arsenide

Opto Diode Corp of Newbury Park, CA, USA (a division in the Photonics Group of ITW) has launched the OD-669-850 high-power gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. Suitable for night-vision illumination tasks, it features ultra-high optical output, from 800mW (minimum) to1250mW (typical) and a peak emission wavelength of 850nm.

Spectral bandwidth at 50% is typically 40nm, and the half-intensity beam angle is 120 degrees. All surfaces on the standard 2-lead, TO-66 electrically isolated package are gold plate.

The OD-669-850's operating and storage temperatures range from -40°C to +100°C with a maximum junction temperature of 100°C. Power dissipation (under absolute maximum ratings at 25°C) is 6W, with a continuous forward current of 370mA, a peak forward current of 1A and reverse voltage at 5V. The lead soldering temperature (at 1/16-inches from case for 10 seconds) is 260°C.