Murata company pSemi Corp of San Diego, CA, USA (formerly Peregrine Semiconductor Corp) – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has introduced what it clams is the first monolithic silicon-on-insulator (SOI) Wi-Fi front-end module (FEM).
Suitable for Wi-Fi home gateways, routers and set-top boxes, the PE561221 uses a smart bias circuit to deliver a high-linearity signal and excellent long-packet error vector magnitude (EVM) performance. Combining the intelligent integration capabilities of pSemi’s SOI technology and Murata’s expertise in Wi-Fi connectivity solutions and advanced packaging, the 2.4GHz Wi-Fi FEM integrates a low-noise amplifier (LNA), a power amplifier (PA) and two RF switches (SP4T, SP3T). The monolithic die uses a compact 16-pin, 2mm x 2mm LGA package suitable for either stand-alone use or in 4x4 MIMO and 8x8 MIMO modules.
“The new IEEE 802.11ax standard is utilizing high-order modulation schemes (1024 QAM) with demanding EVM requirements,” says VP of worldwide sales Colin Hunt. “Traditional process technologies struggle to keep up with both performance and integration requirements, and only SOI can offer the ideal combination of integration and high performance,” he adds. “This new monolithic Wi-Fi module is a great example of the types of technology and product advancements pSemi and Murata can accomplish together.”
The 2.4GHz Wi-Fi FEM is based on pSemi’s UltraCMOS technology platform — a patented form of SOI. Due to its RF and microwave properties, SOI is said to be an optimal substrate for integration. When paired with high-volume CMOS manufacturing, the result is a reliable, repeatable technology platform that offers what is reckoned to be superior performance compared with other mixed-signal processes. UltraCMOS technology also enables intelligent integration — the unique design ability to integrate RF, digital and analog components on a single die.
The PE561221 leverages the intelligent integration capabilities of UltraCMOS technology to deliver what is claimed to be exceptional performance, low power consumption and high reliability with 2kV HBM ESD rating. Through advanced analog and digital design techniques, the Wi-Fi FEM delivers long-packet EVM performance with less than 0.1dB of gain droop while operating across the entire -40°C to 85°C temperature range. At -40dB EVM (MCS9), the output power is +19dBm with less than 0.05dBm droop in power output after a 4ms packet. The IC delivers what is claimed to be best-in-class dynamic error vector magnitude (DEVM) and current consumption without requiring digital pre-distortion (DPD), as well as excellent MCS11 performance for 802.11ax applications.
Volume-production parts and samples of the PE561221 are available now. The PE561221 is the first product in pSemi’s Wi-Fi FEM portfolio; the product roadmap includes 5GHz Wi-Fi FEM solutions.
