Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V.
Features of the MB51T008A include: (1) drain-source on-state resistance (RDS(on)) of 13mΩ and total gate charge (Qg) of 16nC, which enables roughly half the FOM of silicon-based power devices with an equivalent breakdown voltage; (2) minimal parasitic inductance and high-frequency operation through the use of wafer-level chip-scale packaging (WLCSP); and (3) a proprietary gate design that enables normally-off operation.
The new device is suitable for high-side switches and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles. In addition, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency.
Picture: Fujitsu’s new MB51T008A GaN-on-Si power device in wafer-level chip-scale package.
Fujitsu Semiconductor plans to begin sample shipments in July, with volume production scheduled to begin in 2014.
The firm says that, with the new addition to its lineup, it will be able to offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of fields, from home appliances and ICT equipment to automotive applications.
In addition to the 150V-breakdown MB51T008A, Fujitsu Semiconductor is also developing models with breakdown voltages of 600V and 30V, helping to enable enhanced power efficiency in a wide range of product areas. The GaN power devices are based on high-electron-mobility transistor (HEMT) technology, in which Fujitsu Laboratories has led development since the 1980s, the firm claims. Building on its IP portfolio in the technology, Fujitsu Semiconductor aims to rapidly bring its GaN power devices to market. Also, to expand business further, it plans to build partnerships with customers across a wide range of industries.
The MB51T008A and other GaN products are on display at the ‘TECHNO-FRONTIER 2013’ trade show at Tokyo Big Sight, Japan (17-19 July). The firm plans to highlight performance improvements in its GaN power devices with 600V breakdown voltages, as well as prototypes and test data for a 2.5kW power supply employing a GaN power device, a high-frequency PFC (power factor correction), and a high-frequency DC-DC converter.
