Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect transistor) into a single package (equivalent in size to a standard IGBT module) - designed for inverters and converters in solar power conditioners and industrial equipment.
Picture: Rohm's new BSM300D12P2E001 1200V/300A full-SiC power module.
The high 300A-rated current makes the BSM300D12P2E001 suitable for high-power applications such as large-capacity power supplies for industrial equipment. Meanwhile, 77% lower switching loss versus conventional insulated-gate bipolar transistor (IGBT) modules enables high-frequency operation, contributing to smaller cooling counter-measures and peripheral components, says Rohm.
In March 2012, Rohm began mass production of what was reckoned to be the first full-SiC power module with an integrated power semiconductor element composed entirely of silicon carbide. In addition, its 120A and 180A/1200V products continue to see increased adoption in the industrial and power sectors. Also, although further increases in current are possible due to energy-saving effects, in order to maximize the high-speed switching capability of SiC products an entirely new package design is needed that can minimize the effects of surge voltage during switching, which can become particularly problematic at higher currents, adds the firm.
In response, the BSM300D12P2E001 features an optimized chip layout and module construction that significantly reduces internal inductance, suppressing surge voltage while enabling support for higher-current operation up to 300A.
Going forward, Rohm says that it will continue to strengthen its lineup by developing products compatible with larger currents by incorporating SiC devices utilizing high-voltage modules and trench configurations.
