Trade Resources Industry Views TriQuint Semiconductor Announced The Release of New Gallium Nitride Transistors

TriQuint Semiconductor Announced The Release of New Gallium Nitride Transistors

TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.

TriQuint is exhibiting the new GaN products, processes and service solutions, as well as small-cell power amplifiers, optical drivers, and Spatium (TriQuint's TWTA replacement technology) in stand 130/141 at European Microwave Week (EuMW 2013) at the Nuremburg Convention Center, Germany (8-10 October). “Products span from new industry-leading optical modulator drivers, to a new family of small-cell amplifiers, to Spatium PAs that replace TWTAs, and our ever-growing portfolio of GaN based products and processes,” says James L. Klein, VP & general manager for Infrastructure and Defense Products.

New GaN solutions

TriQuint is announcing two new high-power GaN packaged transistors: the 200W T1G4020036-FS/FL (covering DC-3.3GHz) and the 285W T1G2028536-FS/FL (covering DC-2GHz). Both devices offer excellent gain, enabling smaller RF amplifiers and reduced part-counts in many applications. Both devices are widely exportable, and suit commercial and defense applications including professional communications, commercial and defense radars, avionics and RF test systems.

TriQuint's new GaN transistors are joined by new GaN amplifiers and low-noise amplifiers (LNAs) that also deliver high efficiency and improved performance compared to competing products for wide-ranging commercial and defense applications. New GaN products include wideband LNAs covering 2-6GHz and 6-12GHz with what is claimed to be excellent gain. New amplifiers include a family of solutions that focus on the needs of S-band radar and other key frequencies with what is claimed to be excellent gain and efficiency.

Small-cell power amplifiers

TriQuint is introducing the first in a new family of small-cell integrated power amplifiers that also serve active antenna base-stations. The new TGA2450-SM amplifier reduces board space while delivering high efficiency as a key component in 3G/4G mobile networks including LTE. Sampling and now available, the TGA2450-SM meets Band 1 requirements while reducing PCB areas 50%. TriQuint also has integrated amplifier solutions in development for additional global cellular bands.

SMT optical solutions

TriQuint also recently added four new surface-mount technology (SMT) optical network modulator drivers to its portfolio, expand the firm’s line-up with devices that include miniaturized and integrated modules. TriQuint says that its optical components reduce overall system costs, simplify RF design and shrink board space for existing 100Gb/s optical fiber networks and future 200/400G systems.

Spatium replaces TWTAs

TriQuint recently acquired CAP Wireless and its Spatium RF power combining technology, which replaces traveling wave tube amplifiers (TWTAs) in communications and defense systems. This technology leverages the firm’s GaN technology and expands its expertise in high-power RF solid-state amplifier systems. Spatium technology adds to the exceptional efficiency, bandwidth and ruggedness of TriQuint's product portfolio. In high-power RF applications, Spatium delivers what is claimed to be superior broadband RF power efficiency through the use of patented coaxial spatial combining techniques. Spatium also provides other performance advantages including solid-state reliability, smaller form factors, higher power densities and reduced weight compared to either TWTA-based systems or conventional planar power combining products.

Source: http://www.semiconductor-today.com/news_items/2013/OCT/TRIQUINT_031013.shtml
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TriQuint Exhibits New Gan Solutions, Optical Modulator Drivers and Base-Station Amplifiers