In booth 1815 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17–22 June), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching four new gallium nitride (GaN) devices that aim to improve RF efficiency, reduce overall costs and enhance system ruggedness.
''Our internal product development programs are creating new commercial and defense lower-voltage devices,'' says James L. Klein, VP & general manager of Defense Products and Foundry Services for TriQuint.
Specifically, TriQuint is launching three new GaN power amplifiers that deliver greater efficiency, wideband coverage and what is claimed to be excellent performance for communications, defense and civilian radar: the 14-16GHz TGA2572-FL (available now) and the 14-15.5GHz TGA2579-FL and the 13-15GHz TGA2593-GSG ( available in July). TriQuint is also announcing availability of the T1G6003028-FS, a 30W wideband GaN packaged transistor that can cut the number of driver circuits in a typical power amplifier design by 50%.
In public forums at IMS 2012, TriQuint is exploring high-performance GaN capabilities and ways that the technology can enable smaller circuits, as well as better-performing low-voltage and high-power systems. In addition to outperforming silicon, gallium arsenide and other semiconductor technologies, GaN-based integrated circuits are also seen as being key to future 'green' RF and DC-DC power solutions that can reduce network electrical consumption, enable greater range in electric vehicles, or extend smart-phone battery life, the firm adds.
Hosted by distributor Richardson RFPD in booth 1818 at IMS 2012 (at 1pm on 19 June), TriQuint’s GaN product development’s are the focus of a presentation in which it will lead a discussion on newly released RF power amplifiers, switches, transistors and integrated assembly/packaging capabilities.
Tags: TriQuint RF GaN GaN
Visit: www.triquint.com/defense
