WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device production capabilities to its broad gallium arsenide (GaAs) and gallium nitride GaN) technology portfolio.
The new foundry services provide flexible, large-scale manufacturing of a variety of complex laser and photodiode designs for 2.5G, 10G and 25G data rates. This vertical production capability provides customizable manufacturing services including epitaxial growth/re-growth, material and device characterization as well as full device fabrication and testing.
WIN's flexible epitaxial growth and optical device manufacturing will accommodate indium phosphide (InP) substrates from 2-inch to 4-inch diameter. Epitaxial growth/characterization services for lasers and photodiodes are now in place, and installation/development of a complete optical device fabrication line is underway and scheduled for full release by fourth-quarter 2016. WIN says that the vertically integrated device capability will provide the optical market with access to its manufacturing scale, production efficiency and technology expertise.
WIN is attending the Optical Fiber Communications Conference (OFC 2016) in Anaheim, CA, USA (20-25 March), where its technologists and sales representatives will provide full details of the firm's new optical device wafer foundry services.
