Trade Resources Market View Aethercomm Is Launching The SSPA 6.000-18.000-50 High-Power Super-Broadband GaN RF

Aethercomm Is Launching The SSPA 6.000-18.000-50 High-Power Super-Broadband GaN RF

Aethercomm Inc of San Marcos, CA, USA, which designs and makes high power RF amplifiers, subsystems and systems for use in radar, electronic warfare, communication systems, and test & measurement, is launching the SSPA 6.000-18.000-50 high-power super-broadband gallium nitride (GaN) RF and microwave amplifier operating at 6-18GHz for aerospace and defense applications.

Packaged in a modular housing of 8.5 by 3.5 by 1.38 inches, the solid-state power amplifier (SSPA) offers high output power of 50W over a multi-decade bandwidth with power-added efficiency, and operates at a base plate temperature of -40°C to 55°C. The device has a typical P3dB of 40W at room temperature with a minimum of 25W.

Noise figure at room temperature is 12dB typical. The amplifier offers a typical large-signal power gain of 47dB with a typical gain flatness of ±1.0dB. The power and gain flatness across the band is extremely flat for the bandwidth, says the firm. Input VSWR is 2.0:1 maximum. Class AB quiescent current is 8.5A typical employing a +26V DC supply.

The SSPA includes an external DC blanking command that enables and disables the module in less than 20 microseconds. A logic low or open circuit commands the PA OFF. A logic high commands the amplifier ON.

Standard features include over/under voltage protection and reverse polarity protection. Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.

Source: http://www.semiconductor-today.com/news_items/2013/SEP/AETHERCOMM_160913.html
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Aethercomm Launches 50W, 6-18GHz Gan RF Amplifier for Aerospace & Defense Applications