Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part educational video podcast series designed to provide power system design engineers with a technical foundation and application-focused toolset on how to design more efficient power conversion systems using GaN-based transistors.
Beyond giving an overview of the theoretical underpinnings and design basics for using GaN transistors, the video series provides practical examples on the use of GaN transistors in widely used power electronics applications such as DC-DC conversion for telecom and datacom systems. In addition, it provides examples of how these devices enable emerging applications, such as wireless power transfer and RF envelope tracking.
Kicking off the series is 'How to GaN 1 – Material Comparisons', which provides a basic understanding of gallium nitride as a semiconductor material. Subsequent episodes look at device performance characteristics, provide actual design examples, and get into the practical application of eGaN FETs by examining design criteria such as gate drive, layout and thermal management.
"This series of short, less than ten-minute each, videos will help designers understand the exceptional benefits of GaN technology and the intricacies of working with GaN transistors in power conversion systems," says CEO & co-founder Alex Lidow. "Most importantly, the videos will accelerate design engineers' learning curve and increase their ability to take maximum advantage of the high switching frequency and high performance of GaN power transistors."
The How to GaN video series is accessible on the EPC video library or on the EPC YouTube Video Channel.
The presenters Drs Alex Lidow, Michael DeRooij, Johan Strydom and David Reusch work for EPC, the first company to introduce enhancement-mode GaN transistors. Collectively, the presenters have over 75 years experience working in power transistor design and application. All four have extensive practical experience in the emerging GaN transistor technology. Lidow concentrates on GaN transistor theory and process design, while Strydom, DeRooij, and Reusch focus on GaN power transistor applications.
