The US Army Research Laboratory (ARL) has entered into a collaborative alliance via a $1.1m grant with Raytheon Company of Waltham, MA, USA to develop Scalable, Agile, Multimode, Front End Technology (SAMFET) for the Army's Next Generation ...
Tags: ARL, next-generation radar systems
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Airbus Defence and Space, which is reckoned to be the world's second largest space company (and a division of Airbus Group, Europe's top defence and space enterprise), has won its third contract in 18 months for its latest gallium nitride ...
Tags: GaN HEMT, SSPAs, Navigation Satellites
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that optoelectronics manufacturer Xiamen Changelight Co Ltd of Xiamen, Fujian Province, China has finalized qualification of its AIX R6 Close Coupled ...
Tags: Aixtron SE, Changelight, MOCVD
At a ceremony at the UK Engineering and Physical Sciences Research Council (EPSRC) National Centre for Power Electronics Annual Conference 2016 in Nottingham, UK, a post-graduate team from Imperial College London received the £2000 ...
Tags: GaN Systems, power conversion
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
Spurred by new technology and architectures, very small aperture terminal (VSAT) applications are evolving from enterprise connectivity and video to competitive wireless broadband alternative, notes the Strategy Analytics Advanced ...
Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
In booth 10.2/L36 at the ANGA COM 2016 Exposition & Congress for Broadband, Cable and Satellite in Cologne, Germany (7-9 June), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for ...
Tags: Qorvo, CATV, MCM Amplifiers
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor