Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
High initial price: LEDs are currently more expensive, price per lumen, on an initial capital cost basis, than most conventional lighting technologies. As of 2010, the cost per thousand lumens (kilolumen) was about $18. The price is ...
Tags: LED, LED Disadvantages
White light There are two primary ways of producing white light-emitting diodes (WLEDs), LEDs that generate high-intensity white light. One is to use individual LEDs that emit three primary colors— red, green, and blue — and ...
Tags: White LED
BluGlass Ltd of Silverwater, Australia says that it has succeeded in its initial laboratory experiments in developing p-type gallium nitride (p-GaN) material (essential for making up the top layers of a nitride LED). Spun off from the ...
Tags: BluGlass RPCVD, Macquarie University, RPCVD, nitride LED
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
According to a market research report published by Strategies Unlimited (SU), the high-brightness (HB) LED market, experienced a 93 percent growth rate between 2009 and 2010. In 2009, the global market for packaged HB LEDs was $5.6 billion. ...
Tags: Sapphire Wafer
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
The LED consists of a chip of semiconducting material doped with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. ...
Tags: LED
University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...
Tags: nitride semiconducto, VCSEL, electrical
Current bright blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They can be added to existing red and green LEDs to produce the impression of white light, though white LEDs ...
Researchers in China have developed a low-cost, high-throughput photonic crystal (PhC) process for nitride semiconductor light-emitting diodes (LEDs) [Tongbo Wei et al, Appl. Phys. Lett., vol101, p211111, 2012]. The process used ...
Tags: Nanospheres GaN LEDs MOCVD, LEDs
Back in 1960 Electronics Weekly was born into a ferment of III-V semiconductor research that within two years would produce the first practical LED. In 1960 Dr Nick Holonyak of General Electric was developing an unusual material,GaAsP,as ...
Tags: General Electric, LED history, USA
BluGlass Ltd of Silverwater, Australia says that it has received commitments totalling A$2.35m (US$2.45m) for a placement of new fully paid ordinary shares to institutional investors. When the placement is settled later this week, ...
Tags: BluGlass, commitments, placement, shares, purpose