Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
LED epitaxial wafer and chipmaker as well as LED packaging service provider Lextar Electronics have received orders for LED light tubes with urgent shipments, according to the company. LED chip prices began to slip in the third quarter of ...
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
In late 2013, LEDinside team forecasted major company restructure market trends will continue throughout the year. The trend has been consistent in 2014, as more lighting manufacturers take necessary restructure measures to remain ...
Tags: LED component, LED light
For many LED makers, 2014 has been a challenging year, with performance in the first and second halves of the year very polarized for many, notes Roger Chu, research director of LEDinside (a research division of TrendForce). Lighting market ...
Tags: LED Makers, Entry Level, Electrical
China's State Council (central government) has ordered its subordinate agencies and local governments to stop offering subsidies and tax incentives for China-based LED epitaxial wafer and chip makers because such offering has disrupted ...
Tags: LED industry, LED wafer
China-based LED epitaxial wafer and chip maker San'an Optoelectronics has ordered 50 MOCVD sets worth US$134 million from US-based Veeco Instruments, with the equipment to be delivered during December 2014-August 2015, according to the ...
Tags: LED epitaxial wafer, chip maker, Lights
The Optical Society (OSA) and the IEEE Photonics Society have named Paul Daniel Dapkus, the W. M. Keck Distinguished Professor of Engineering at the University of Southern California (USC), as recipient of the 2015 John Tyndall Award for ...
Tags: metal-organic chemical, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen-based Sanan Optoelectronics Co Ltd, China’s largest LED maker, has ordered 50 TurboDisc EPIK700 gallium nitride (GaN) ...
Tags: LED maker, process equipment, Electrical
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Based on LED epitaxial wafer makers' capacity expansion plans, there will be 252 MOCVD sets shipped globally in 2015, growing 10.5% on year and consisting of 186 sets to be added by China-based makers, 30 by Taiwan-based ones, 19 sets by ...
Tags: LED epitaxial wafer, LED Lights
At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November) – where representatives from industry, research and governmental organizations gathered to discuss recent developments and ...
Tags: Mocvd Technology, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
China-based LED epitaxial wafer and chip maker San'an Optoelectronics, due to subsidies of CNY1.0 billion (US$163 million) offered and orders worth CNY3.0 billion arranged from the government of Xiamen City, southeastern China, will set up ...
Tags: LED epitaxial wafer, chip maker, Lights
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...