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InGaN channels
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Hina's Xidian University Has Been Developing III-Nitride DHS with with InGaN Channels
Dec 25, 2014China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
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Notre Dame and Kopin Corp Have Developed High-Performance Nitride Semiconductor HEMTs
Jan 11, 2013Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN