The board of directors of Hsinchu-based Taiwan Semiconductor Manufacturing Co (TSMC, the world’s biggest silicon wafer foundry) has approved the sale of its stake in TSMC Solid State Lighting (TSMC SSL). Taiwan’s Epistar Corp ...
Tags: LED lighting products, Electrical
Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
LED Epitaxial wafer and chip maker Epistar expects its consolidated revenues for December to increase significantly on month mainly due to orders from China-based LCD TV vendors with urgent shipments to meet peak demand before the 2015 ...
Tags: LED Epitaxial wafer, chip maker, LCD TV backlighting, Lights
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has announced the resignation (effective on 20 December) of its Supervisory Board chairman Jacques ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
China-based LED epitaxial wafer and chip maker San'an Optoelectronics, due to subsidies of CNY1.0 billion (US$163 million) offered and orders worth CNY3.0 billion arranged from the government of Xiamen City, southeastern China, will set up ...
Tags: LED epitaxial wafer, chip maker, Lights
For the third-quarter 2014, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $93.3m, down on $99.3m a year ago and $95.1m last quarter (and below the mid-point of the ...
Tags: Veeco, MOCVD Revenue, LED segment
Taiwan's Ministry of Economic Affairs (MOEA) on October 29 approved the conversion of China-based LED epitaxial wafer and chip maker Sanan Optoelectronics' 19.9% stake in Taiwan-based Formosa Epitaxy into a 3.1% stake in Epistar, with the ...
Tags: LED epitaxial, LED chip
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
For the first nine months of 2014 (to end-September), Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported a 10% drop in revenue year-on-year ...
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has signed a distribution agreement with Intercovamex of Mexico, a supplier of Physical Vapor ...
Tags: Riber, PVD, Electronics