Fabless semiconductor firm Eta Devices Inc of Cambridge, MA, USA has announced availability of what it reckons is the most efficient power amplifier for mobile base stations, using new patented technology that exploits the performance ...
Tags: GaN Power Amplifier, Electronics
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, today announced that Huawei, a leading global information and communications technology (ICT) solutions provider, has presented RFMD with ...
Tags: RFMD, Huawei Supplier
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA says that HTC and Samsung are ramping Skyworks' SkyOne, a highly customizable, fully optimized front-end solution, in several of their recent smartphone launches. The ...
Tags: semiconductor, Electrical, Electronics, HTC, Samsung
Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a gallium arsenide (GaAs) ...
Tags: Electrical, Electronics
For its fiscal second-quarter 2014 (ended 28 September 2013), RF Micro Devices Inc of Greensboro, NC, USA has reported record revenue of $310.7m, up 6% on $293m last quarter and 48.2% on $209.7m a year ago. The growth is attributed ...
Tags: RFMD, Electrical, Electronics
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the Company's fiscal 2014 second quarter, ended September 28, 2013. Quarterly Highlights: ...
RF Micro Devices Inc of Greensboro, NC, USA has begun high-volume production of multiple new power amplifiers (PAs) and power management integrated circuits (ICs) that incorporate the firm's envelope tracking (ET) technology. RFMD says that ...
Tags: Electrical, Electronics
Due to the slow growth in the GaAs device market and increasing use of multi-band GaAs power amplifiers in cellular applications, total demand for semi-insulating (SI) GaAs epitaxial substrates (from manufacturers such as IQE, VPEC, Kopin, ...
Tags: EPI Production, Electronics
A strong close to 2012 allowed the gallium arsenide device market to grow by about 2% to record revenue of slightly more than $5.3bn for the year, due mainly to the cellular segment, as most other segments for GaAs devices were flat or ...
Tags: GaAs Industry, Electrical
TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...
Tags: TriQuint, Optical Modulator
Wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9581 802.11ac front-end integrated circuit (FEIC), AWT6651 ProEficient power amplifier (PA), and ALT6702 HELP4 PA are enabling wireless ...
Tags: Anadigics, Galaxy Note 3
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA says that it has completed a recently announced expansion of its test, tape & reel and assembly facility in Beijing, China. In addition to newly qualified internal assembly capacity for power ...
RFMD a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has successfully completed a recently announced expansion of its test, tape and reel, and assembly facility, located in Beijing, ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched a ceramic gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: GaN-on-Sic, Electronics