Plessey of Plymouth, UK has entered into a distribution agreement for the UK and Ireland with Newbury-based Freeway Lighting, an electronics distributor and provider of advanced lighting solutions. "We specialize in the distribution of ...
Tags: Plessey, Freeway Lighting
Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...
UK-based Cobham has launched a scalable family of gallium nitride (GaN) solid-state transmitter solutions. SOLSTx (pronounced 'solstice') is optimized for ground, maritime and airborne applications including air-traffic control, weather, ...
Tags: Radar Transmitters, Cobham
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology fabricated on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has expanded its product portfolio with two new minimalist ambient LED luminaire ...
Tags: Soraa GaN-on-GaN
Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...
Tags: White LED Packaging
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
Plessey of Plymouth, UK has been awarded the Manufacturing Business Award 2016 for large businesses by the Plymouth Herald. Now in their sixth year, the awards celebrate the city's most dynamic companies. Presented at a gala dinner at the ...
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...
Freebird Semiconductor Corp of North Andover, MA, USA, which manufactures high-reliability gallium nitride (GaN) high-electron-mobility transistor (HEMT) products for power semiconductor technologies in the commercial space-flight ...