BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
In booth 10.2/L36 at the ANGA COM 2016 Exposition & Congress for Broadband, Cable and Satellite in Cologne, Germany (7-9 June), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for ...
Tags: Qorvo, CATV, MCM Amplifiers
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor
Plessey of Plymouth, UK has entered into a distribution agreement for the UK and Ireland with Newbury-based Freeway Lighting, an electronics distributor and provider of advanced lighting solutions. "We specialize in the distribution of ...
Tags: Plessey, Freeway Lighting
Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...
UK-based Cobham has launched a scalable family of gallium nitride (GaN) solid-state transmitter solutions. SOLSTx (pronounced 'solstice') is optimized for ground, maritime and airborne applications including air-traffic control, weather, ...
Tags: Radar Transmitters, Cobham
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...